Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length
Edge-to-edge metal-semiconductor junctions have the potential to improve the performance of 2D transistors. Here, the authors report a synthetic strategy to fabricate monolayer MoS2-PtTe2 heterojunction arrays with sub-1-nm transfer length and enhanced carrier injection compared to vertical 3D metal...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-08-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-022-32582-9 |
| _version_ | 1811285836699795456 |
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| author | Seunguk Song Aram Yoon Jong-Kwon Ha Jihoon Yang Sora Jang Chloe Leblanc Jaewon Wang Yeoseon Sim Deep Jariwala Seung Kyu Min Zonghoon Lee Soon-Yong Kwon |
| author_facet | Seunguk Song Aram Yoon Jong-Kwon Ha Jihoon Yang Sora Jang Chloe Leblanc Jaewon Wang Yeoseon Sim Deep Jariwala Seung Kyu Min Zonghoon Lee Soon-Yong Kwon |
| author_sort | Seunguk Song |
| collection | DOAJ |
| description | Edge-to-edge metal-semiconductor junctions have the potential to improve the performance of 2D transistors. Here, the authors report a synthetic strategy to fabricate monolayer MoS2-PtTe2 heterojunction arrays with sub-1-nm transfer length and enhanced carrier injection compared to vertical 3D metallic contacts. |
| first_indexed | 2024-04-13T02:49:51Z |
| format | Article |
| id | doaj.art-d49153b2439a4c1c9921bd7a6a1865d3 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-04-13T02:49:51Z |
| publishDate | 2022-08-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-d49153b2439a4c1c9921bd7a6a1865d32022-12-22T03:05:52ZengNature PortfolioNature Communications2041-17232022-08-0113111110.1038/s41467-022-32582-9Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer lengthSeunguk Song0Aram Yoon1Jong-Kwon Ha2Jihoon Yang3Sora Jang4Chloe Leblanc5Jaewon Wang6Yeoseon Sim7Deep Jariwala8Seung Kyu Min9Zonghoon Lee10Soon-Yong Kwon11Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST)Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST)Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST)Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST)Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST)Department of Electrical and Systems Engineering, University of PennsylvaniaDepartment of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST)Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST)Department of Electrical and Systems Engineering, University of PennsylvaniaCenter for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS)Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST)Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST)Edge-to-edge metal-semiconductor junctions have the potential to improve the performance of 2D transistors. Here, the authors report a synthetic strategy to fabricate monolayer MoS2-PtTe2 heterojunction arrays with sub-1-nm transfer length and enhanced carrier injection compared to vertical 3D metallic contacts.https://doi.org/10.1038/s41467-022-32582-9 |
| spellingShingle | Seunguk Song Aram Yoon Jong-Kwon Ha Jihoon Yang Sora Jang Chloe Leblanc Jaewon Wang Yeoseon Sim Deep Jariwala Seung Kyu Min Zonghoon Lee Soon-Yong Kwon Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length Nature Communications |
| title | Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length |
| title_full | Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length |
| title_fullStr | Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length |
| title_full_unstemmed | Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length |
| title_short | Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length |
| title_sort | atomic transistors based on seamless lateral metal semiconductor junctions with a sub 1 nm transfer length |
| url | https://doi.org/10.1038/s41467-022-32582-9 |
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