Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact

Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact

Abstract Nonvolatile phase‐change random access memory (PCRAM) is regarded as one of the promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power consumption in PCRAM. Utilizing narrow edge‐contact of gr...

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Bibliographic Details
Main Authors: Xiujun Wang, Sannian Song, Haomin Wang, Tianqi Guo, Yuan Xue, Ruobing Wang, HuiShan Wang, Lingxiu Chen, Chengxin Jiang, Chen Chen, Zhiyuan Shi, Tianru Wu, Wenxiong Song, Sifan Zhang, Kenji Watanabe, Takashi Taniguchi, Zhitang Song, Xiaoming Xie
Format: Article
Language:English
Published: Wiley 2022-09-01
Series:Advanced Science
Subjects:
cycle endurance
edge‐contact
graphene nanoribbon
phase change cell
power consumption
Online Access:https://doi.org/10.1002/advs.202202222

Internet

https://doi.org/10.1002/advs.202202222

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