Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact
Abstract Nonvolatile phase‐change random access memory (PCRAM) is regarded as one of the promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power consumption in PCRAM. Utilizing narrow edge‐contact of gr...
| Main Authors: | , , , , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2022-09-01
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| Series: | Advanced Science |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/advs.202202222 |
| _version_ | 1798036606032019456 |
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| author | Xiujun Wang Sannian Song Haomin Wang Tianqi Guo Yuan Xue Ruobing Wang HuiShan Wang Lingxiu Chen Chengxin Jiang Chen Chen Zhiyuan Shi Tianru Wu Wenxiong Song Sifan Zhang Kenji Watanabe Takashi Taniguchi Zhitang Song Xiaoming Xie |
| author_facet | Xiujun Wang Sannian Song Haomin Wang Tianqi Guo Yuan Xue Ruobing Wang HuiShan Wang Lingxiu Chen Chengxin Jiang Chen Chen Zhiyuan Shi Tianru Wu Wenxiong Song Sifan Zhang Kenji Watanabe Takashi Taniguchi Zhitang Song Xiaoming Xie |
| author_sort | Xiujun Wang |
| collection | DOAJ |
| description | Abstract Nonvolatile phase‐change random access memory (PCRAM) is regarded as one of the promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power consumption in PCRAM. Utilizing narrow edge‐contact of graphene can effectively reduce the active volume of phase change material in each cell, and therefore realize low‐power operation. Here, it demonstrates that the power consumption can be reduced to ≈53.7 fJ in a cell with ≈3 nm‐wide graphene nanoribbon (GNR) as edge‐contact, whose cross‐sectional area is only ≈1 nm2. It is found that the polarity of the bias pulse determines its cycle endurance in the asymmetric structure. If a positive bias is applied to the graphene electrode, the endurance can be extended at least one order longer than the case with a reversal of polarity. In addition, the introduction of the hexagonal boron nitride (h‐BN) multilayer leads to a low resistance drift and a high programming speed in a memory cell. The work represents a great technological advance for the low‐power PCRAM and can benefit in‐memory computing in the future. |
| first_indexed | 2024-04-11T21:15:16Z |
| format | Article |
| id | doaj.art-d491f25e0df842469a3a4a94e6dc5293 |
| institution | Directory Open Access Journal |
| issn | 2198-3844 |
| language | English |
| last_indexed | 2024-04-11T21:15:16Z |
| publishDate | 2022-09-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj.art-d491f25e0df842469a3a4a94e6dc52932022-12-22T04:02:50ZengWileyAdvanced Science2198-38442022-09-01925n/an/a10.1002/advs.202202222Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐ContactXiujun Wang0Sannian Song1Haomin Wang2Tianqi Guo3Yuan Xue4Ruobing Wang5HuiShan Wang6Lingxiu Chen7Chengxin Jiang8Chen Chen9Zhiyuan Shi10Tianru Wu11Wenxiong Song12Sifan Zhang13Kenji Watanabe14Takashi Taniguchi15Zhitang Song16Xiaoming Xie17State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. ChinaState Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. ChinaState Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. ChinaState Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. ChinaState Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. ChinaState Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. ChinaState Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. ChinaState Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. ChinaState Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. ChinaState Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. ChinaState Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. ChinaState Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. ChinaState Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. ChinaState Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. ChinaResearch Center for Functional Materials National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 JapanInternational Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 JapanState Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. ChinaState Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. ChinaAbstract Nonvolatile phase‐change random access memory (PCRAM) is regarded as one of the promising candidates for emerging mass storage in the era of Big Data. However, relatively high programming energy hurdles the further reduction of power consumption in PCRAM. Utilizing narrow edge‐contact of graphene can effectively reduce the active volume of phase change material in each cell, and therefore realize low‐power operation. Here, it demonstrates that the power consumption can be reduced to ≈53.7 fJ in a cell with ≈3 nm‐wide graphene nanoribbon (GNR) as edge‐contact, whose cross‐sectional area is only ≈1 nm2. It is found that the polarity of the bias pulse determines its cycle endurance in the asymmetric structure. If a positive bias is applied to the graphene electrode, the endurance can be extended at least one order longer than the case with a reversal of polarity. In addition, the introduction of the hexagonal boron nitride (h‐BN) multilayer leads to a low resistance drift and a high programming speed in a memory cell. The work represents a great technological advance for the low‐power PCRAM and can benefit in‐memory computing in the future.https://doi.org/10.1002/advs.202202222cycle enduranceedge‐contactgraphene nanoribbonphase change cellpower consumption |
| spellingShingle | Xiujun Wang Sannian Song Haomin Wang Tianqi Guo Yuan Xue Ruobing Wang HuiShan Wang Lingxiu Chen Chengxin Jiang Chen Chen Zhiyuan Shi Tianru Wu Wenxiong Song Sifan Zhang Kenji Watanabe Takashi Taniguchi Zhitang Song Xiaoming Xie Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact Advanced Science cycle endurance edge‐contact graphene nanoribbon phase change cell power consumption |
| title | Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact |
| title_full | Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact |
| title_fullStr | Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact |
| title_full_unstemmed | Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact |
| title_short | Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact |
| title_sort | minimizing the programming power of phase change memory by using graphene nanoribbon edge contact |
| topic | cycle endurance edge‐contact graphene nanoribbon phase change cell power consumption |
| url | https://doi.org/10.1002/advs.202202222 |
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