Temperature and bias voltage dependences of magnetic tunnel junction with FeAlSi electrode
We fabricated magnetic tunnel junctions (MTJs) with FeAlSi free layers and investigated the tunnel magnetoresistance (TMR) properties. We found that the temperature and bias voltage dependences of the TMR effect in FeAlSi-MTJs were almost the same as MTJs with Fe free layers despite the low Curie te...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0189570 |