A Theoretical Method for Removal of Gravity-Induced Effects in Silicon Wafer Geometry Measurements
In the current study, an improved method to obtain measurements of geometry of silicon wafers capable of removing the effect induced by gravity and the contact of supports is presented. The classical method only requires two measurements, while the proposed method requires several images. Neverthele...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-09-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/12/18/9049 |