A Theoretical Method for Removal of Gravity-Induced Effects in Silicon Wafer Geometry Measurements
In the current study, an improved method to obtain measurements of geometry of silicon wafers capable of removing the effect induced by gravity and the contact of supports is presented. The classical method only requires two measurements, while the proposed method requires several images. Neverthele...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-09-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/12/18/9049 |
| _version_ | 1797491581464346624 |
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| author | Juan M. Trujillo-Sevilla Jan Gaudestad José M. Rodríguez-Ramos |
| author_facet | Juan M. Trujillo-Sevilla Jan Gaudestad José M. Rodríguez-Ramos |
| author_sort | Juan M. Trujillo-Sevilla |
| collection | DOAJ |
| description | In the current study, an improved method to obtain measurements of geometry of silicon wafers capable of removing the effect induced by gravity and the contact of supports is presented. The classical method only requires two measurements, while the proposed method requires several images. Nevertheless, the classical method relies on the perfect placement and alignment of the wafer over the supports, while the proposed method is strongly immune against misplacing and misaligning the wafer from one measurement to another. The mathematical basis for the new method is presented together with results of a simulation that compares the performance of the classical and the proposed method. It is also shown that, for placement errors as small as 100 nm, the proposed method has better results than the classical method. |
| first_indexed | 2024-03-10T00:51:21Z |
| format | Article |
| id | doaj.art-d4b807fb68b24cacab80a76aff632fa1 |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-10T00:51:21Z |
| publishDate | 2022-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-d4b807fb68b24cacab80a76aff632fa12023-11-23T14:52:10ZengMDPI AGApplied Sciences2076-34172022-09-011218904910.3390/app12189049A Theoretical Method for Removal of Gravity-Induced Effects in Silicon Wafer Geometry MeasurementsJuan M. Trujillo-Sevilla0Jan Gaudestad1José M. Rodríguez-Ramos2Wooptix S.L. Avda, Trinidad 61 Planta 7, 38204 La Laguna, SpainWooptix S.L. Avda, Trinidad 61 Planta 7, 38204 La Laguna, SpainWooptix S.L. Avda, Trinidad 61 Planta 7, 38204 La Laguna, SpainIn the current study, an improved method to obtain measurements of geometry of silicon wafers capable of removing the effect induced by gravity and the contact of supports is presented. The classical method only requires two measurements, while the proposed method requires several images. Nevertheless, the classical method relies on the perfect placement and alignment of the wafer over the supports, while the proposed method is strongly immune against misplacing and misaligning the wafer from one measurement to another. The mathematical basis for the new method is presented together with results of a simulation that compares the performance of the classical and the proposed method. It is also shown that, for placement errors as small as 100 nm, the proposed method has better results than the classical method.https://www.mdpi.com/2076-3417/12/18/9049silicon wafer metrologygravity removal |
| spellingShingle | Juan M. Trujillo-Sevilla Jan Gaudestad José M. Rodríguez-Ramos A Theoretical Method for Removal of Gravity-Induced Effects in Silicon Wafer Geometry Measurements Applied Sciences silicon wafer metrology gravity removal |
| title | A Theoretical Method for Removal of Gravity-Induced Effects in Silicon Wafer Geometry Measurements |
| title_full | A Theoretical Method for Removal of Gravity-Induced Effects in Silicon Wafer Geometry Measurements |
| title_fullStr | A Theoretical Method for Removal of Gravity-Induced Effects in Silicon Wafer Geometry Measurements |
| title_full_unstemmed | A Theoretical Method for Removal of Gravity-Induced Effects in Silicon Wafer Geometry Measurements |
| title_short | A Theoretical Method for Removal of Gravity-Induced Effects in Silicon Wafer Geometry Measurements |
| title_sort | theoretical method for removal of gravity induced effects in silicon wafer geometry measurements |
| topic | silicon wafer metrology gravity removal |
| url | https://www.mdpi.com/2076-3417/12/18/9049 |
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