Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies

Study of 100V GaN power devices in dynamic condition and GaN RF device performances in sub-6GHz frequencies

AlGaN/GaN devices for both power and RF applications have been investigated in this work. In particular, regarding power applications, 100 V p-GaN gate transistors have been analysed both in DC and in dynamic conditions with specific attention to the high temperature behaviour.As a first step, the h...

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Bibliographic Details
Main Authors: Giovanni Giorgino, Marcello Cioni, Cristina Miccoli, Leonardo Gervasi, Marcello Francesco Salvatore Giuffrida, Martina Ruvolo, Maria Eloisa Castagna, Giacomo Cappellini, Giuseppe Luongo, Maurizio Moschetti, Aurore Constant, Cristina Tringali, Ferdinando Iucolano, Alessandro Chini
Format: Article
Language:English
Published: Elsevier 2023-12-01
Series:e-Prime: Advances in Electrical Engineering, Electronics and Energy
Subjects:
GaN HEMTS
Magnesium doping
p-GaN activation
Normally-off
Power applications
Dynamic RON
Online Access:http://www.sciencedirect.com/science/article/pii/S2772671123002334

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http://www.sciencedirect.com/science/article/pii/S2772671123002334

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