Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution
Metal-assisted chemical etching plays a critical role in synthesizing GaN nanowires. In this work, GaN films grown on Si(111) substrates are immersed in CuSO4/HF etchant under UV illumination to fabricate nanowires. These GaN nanowires are much more homogeneous than those synthesized in AgNO3/HF etc...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2019-06-01
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| Series: | Electrochemistry Communications |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S1388248119301134 |