MOCVD Growth of GaSb and Al GaSb
Abstract. GaSb and Al GaSb are narrow gap semiconductors, is of current interest, for its optoelectronic application in the near and medium infra-red region. The large ratio of the ionization coefficient of hole and electrons is key factor for high speed and low noise in APD. In this paper we repor...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
ITB Journal Publisher
2019-01-01
|
| Series: | Journal of Mathematical and Fundamental Sciences |
| Subjects: | |
| Online Access: | https://journals.itb.ac.id/index.php/jmfs/article/view/9235 |