Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study
A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schott...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Nanoscience and Nanotechnology Research Center, University of Kashan
2012-12-01
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| Series: | Journal of Nanostructures |
| Subjects: | |
| Online Access: | http://jns.kashanu.ac.ir/article_5420_9e9d3bd5833c7e84bb8c8f51338d52f5.pdf |