Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study
A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schott...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Nanoscience and Nanotechnology Research Center, University of Kashan
2012-12-01
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| Series: | Journal of Nanostructures |
| Subjects: | |
| Online Access: | http://jns.kashanu.ac.ir/article_5420_9e9d3bd5833c7e84bb8c8f51338d52f5.pdf |
| Summary: | A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in comparison with (110) and (111) wafers. As the channel length of ultra thin body SBMOSFET scales down to nanoscale regime, especially for high effective SBHs, quantum confinement is created along the channel and current propagates through discrete resonance states. We have studied the possibility of resonant tunneling in SBMOSFET. Resonant tunneling for (110) and (111) orientations appear at higher gate voltages. |
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| ISSN: | 2251-7871 2251-788X |