Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study
A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schott...
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| Format: | Article |
| Language: | English |
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Nanoscience and Nanotechnology Research Center, University of Kashan
2012-12-01
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| Series: | Journal of Nanostructures |
| Subjects: | |
| Online Access: | http://jns.kashanu.ac.ir/article_5420_9e9d3bd5833c7e84bb8c8f51338d52f5.pdf |
| _version_ | 1818562877661904896 |
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| author | Z. Ahangari M. Fathipour |
| author_facet | Z. Ahangari M. Fathipour |
| author_sort | Z. Ahangari |
| collection | DOAJ |
| description | A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in comparison with (110) and (111) wafers. As the channel length of ultra thin body SBMOSFET scales down to nanoscale regime, especially for high effective SBHs, quantum confinement is created along the channel and current propagates through discrete resonance states. We have studied the possibility of resonant tunneling in SBMOSFET. Resonant tunneling for (110) and (111) orientations appear at higher gate voltages. |
| first_indexed | 2024-12-14T01:09:29Z |
| format | Article |
| id | doaj.art-d50081b562f045f59ad31769ecf25b80 |
| institution | Directory Open Access Journal |
| issn | 2251-7871 2251-788X |
| language | English |
| last_indexed | 2024-12-14T01:09:29Z |
| publishDate | 2012-12-01 |
| publisher | Nanoscience and Nanotechnology Research Center, University of Kashan |
| record_format | Article |
| series | Journal of Nanostructures |
| spelling | doaj.art-d50081b562f045f59ad31769ecf25b802022-12-21T23:22:49ZengNanoscience and Nanotechnology Research Center, University of KashanJournal of Nanostructures2251-78712251-788X2012-12-012447748310.7508/jns.2012.04.0105420Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical StudyZ. Ahangari0M. Fathipour1Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, IranSchool of Electrical and Computer Engineering University of Tehran, TehranA comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in comparison with (110) and (111) wafers. As the channel length of ultra thin body SBMOSFET scales down to nanoscale regime, especially for high effective SBHs, quantum confinement is created along the channel and current propagates through discrete resonance states. We have studied the possibility of resonant tunneling in SBMOSFET. Resonant tunneling for (110) and (111) orientations appear at higher gate voltages.http://jns.kashanu.ac.ir/article_5420_9e9d3bd5833c7e84bb8c8f51338d52f5.pdfNanoscale SchottkyNon-equilibrium Green'sFunction (NEGF) formalismQuantum TransportResonant Tunneling |
| spellingShingle | Z. Ahangari M. Fathipour Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study Journal of Nanostructures Nanoscale Schottky Non-equilibrium Green's Function (NEGF) formalism Quantum Transport Resonant Tunneling |
| title | Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study |
| title_full | Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study |
| title_fullStr | Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study |
| title_full_unstemmed | Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study |
| title_short | Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study |
| title_sort | impact of silicon wafer orientation on the performance of metal source drain mosfet in nanoscale regime a numerical study |
| topic | Nanoscale Schottky Non-equilibrium Green's Function (NEGF) formalism Quantum Transport Resonant Tunneling |
| url | http://jns.kashanu.ac.ir/article_5420_9e9d3bd5833c7e84bb8c8f51338d52f5.pdf |
| work_keys_str_mv | AT zahangari impactofsiliconwaferorientationontheperformanceofmetalsourcedrainmosfetinnanoscaleregimeanumericalstudy AT mfathipour impactofsiliconwaferorientationontheperformanceofmetalsourcedrainmosfetinnanoscaleregimeanumericalstudy |