Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study

Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study

A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schott...

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Bibliographic Details
Main Authors: Z. Ahangari, M. Fathipour
Format: Article
Language:English
Published: Nanoscience and Nanotechnology Research Center, University of Kashan 2012-12-01
Series:Journal of Nanostructures
Subjects:
Nanoscale Schottky
Non-equilibrium Green's
Function (NEGF) formalism
Quantum Transport
Resonant Tunneling
Online Access:http://jns.kashanu.ac.ir/article_5420_9e9d3bd5833c7e84bb8c8f51338d52f5.pdf

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