Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching
The prevention of glow-to-arc transition exhibited by micro dielectric barrier discharge (MDBD), as well as its long lifetime, has generated much excitement across a variety of applications. Silicon nitride (SiNx) is often used as a dielectric barrier layer in DBD due to its excellent chemical inert...
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MDPI AG
2016-12-01
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| Series: | Micromachines |
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| Online Access: | http://www.mdpi.com/2072-666X/7/12/232 |
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| author | Qiang Li Jie Liu Yichuan Dai Wushu Xiang Man Zhang Hai Wang Li Wen |
| author_facet | Qiang Li Jie Liu Yichuan Dai Wushu Xiang Man Zhang Hai Wang Li Wen |
| author_sort | Qiang Li |
| collection | DOAJ |
| description | The prevention of glow-to-arc transition exhibited by micro dielectric barrier discharge (MDBD), as well as its long lifetime, has generated much excitement across a variety of applications. Silicon nitride (SiNx) is often used as a dielectric barrier layer in DBD due to its excellent chemical inertness and high electrical permittivity. However, during fabrication of the MDBD devices with multilayer films for maskless nano etching, the residual stress-induced deformation may bring cracks or wrinkles of the devices after depositing SiNx by plasma enhanced chemical vapor deposition (PECVD). Considering that the residual stress of SiNx can be tailored from compressive stress to tensile stress under different PECVD deposition parameters, in order to minimize the stress-induced deformation and avoid cracks or wrinkles of the MDBD device, we experimentally measured stress in each thin film of a MDBD device, then used numerical simulation to analyze and obtain the minimum deformation of multilayer films when the intrinsic stress of SiNx is −200 MPa compressive stress. The stress of SiNx can be tailored to the desired value by tuning the deposition parameters of the SiNx film, such as the silane (SiH4)–ammonia (NH3) flow ratio, radio frequency (RF) power, chamber pressure, and deposition temperature. Finally, we used the optimum PECVD process parameters to successfully fabricate a MDBD device with good quality. |
| first_indexed | 2024-12-10T15:09:31Z |
| format | Article |
| id | doaj.art-d5011e246a9140598f5473f0259246be |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-12-10T15:09:31Z |
| publishDate | 2016-12-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-d5011e246a9140598f5473f0259246be2022-12-22T01:43:59ZengMDPI AGMicromachines2072-666X2016-12-0171223210.3390/mi7120232mi7120232Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale EtchingQiang Li0Jie Liu1Yichuan Dai2Wushu Xiang3Man Zhang4Hai Wang5Li Wen6Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, ChinaDepartment of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, ChinaDepartment of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, ChinaDepartment of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, ChinaDepartment of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, ChinaSchool of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000, ChinaDepartment of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, ChinaThe prevention of glow-to-arc transition exhibited by micro dielectric barrier discharge (MDBD), as well as its long lifetime, has generated much excitement across a variety of applications. Silicon nitride (SiNx) is often used as a dielectric barrier layer in DBD due to its excellent chemical inertness and high electrical permittivity. However, during fabrication of the MDBD devices with multilayer films for maskless nano etching, the residual stress-induced deformation may bring cracks or wrinkles of the devices after depositing SiNx by plasma enhanced chemical vapor deposition (PECVD). Considering that the residual stress of SiNx can be tailored from compressive stress to tensile stress under different PECVD deposition parameters, in order to minimize the stress-induced deformation and avoid cracks or wrinkles of the MDBD device, we experimentally measured stress in each thin film of a MDBD device, then used numerical simulation to analyze and obtain the minimum deformation of multilayer films when the intrinsic stress of SiNx is −200 MPa compressive stress. The stress of SiNx can be tailored to the desired value by tuning the deposition parameters of the SiNx film, such as the silane (SiH4)–ammonia (NH3) flow ratio, radio frequency (RF) power, chamber pressure, and deposition temperature. Finally, we used the optimum PECVD process parameters to successfully fabricate a MDBD device with good quality.http://www.mdpi.com/2072-666X/7/12/232silicon nitrideplasma enhanced chemical vapor deposition (PECVD)multilayer thin filmsresidual stressmicro dielectric barrier dischargesimulation |
| spellingShingle | Qiang Li Jie Liu Yichuan Dai Wushu Xiang Man Zhang Hai Wang Li Wen Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching Micromachines silicon nitride plasma enhanced chemical vapor deposition (PECVD) multilayer thin films residual stress micro dielectric barrier discharge simulation |
| title | Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching |
| title_full | Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching |
| title_fullStr | Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching |
| title_full_unstemmed | Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching |
| title_short | Fabrication of SiNx Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching |
| title_sort | fabrication of sinx thin film of micro dielectric barrier discharge reactor for maskless nanoscale etching |
| topic | silicon nitride plasma enhanced chemical vapor deposition (PECVD) multilayer thin films residual stress micro dielectric barrier discharge simulation |
| url | http://www.mdpi.com/2072-666X/7/12/232 |
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