Band Bending and Trap Distribution along the Channel of Organic Field-Effect Transistors from Frequency-Resolved Scanning Photocurrent Microscopy

The scanning photocurrent microscopy (SPCM) method is applied to pentacene field-effect transistors (FETs). In this technique, a modulated laser beam is focused and scanned along the channel of the transistors. The resulting spatial photocurrent profile is attributed to extra free holes generated fr...

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Bibliographic Details
Main Authors: Gion Kalemai, Nikolaos Vagenas, Athina Giannopoulou, Panagiotis Kounavis
Format: Article
Language:English
Published: MDPI AG 2022-06-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/11/11/1799