Fabrication and characterization of an AlGaN light emitting diode with Al-doped ZnO as a current spreading tunnel junction layer
We fabricated an AlGaN light emitting diode (LED) with a heavily Al-doped n-type ZnO layer on a p-type contact layer as a tunnel junction (TJ) to improve carrier injection into the LED. We characterized its electrical and optical properties and compared them to those of an AlGaN LED without ZnO. Fro...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2023-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0159884 |