GaN ultraviolet photodetector with petal-like β-Ga2O3 microcrystalline layer
A GaN ultraviolet photodetector with a petal-like β-Ga2O3 microcrystalline layer was prepared on the GaN template using electrochemical anodizing and annealing processes. The petal-like β-Ga2O3 microcrystalline layer was found to enhance the absorption of ultraviolet light and suppress the dark curr...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0028550 |