GaN ultraviolet photodetector with petal-like β-Ga2O3 microcrystalline layer
A GaN ultraviolet photodetector with a petal-like β-Ga2O3 microcrystalline layer was prepared on the GaN template using electrochemical anodizing and annealing processes. The petal-like β-Ga2O3 microcrystalline layer was found to enhance the absorption of ultraviolet light and suppress the dark curr...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0028550 |
| _version_ | 1818944318063247360 |
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| author | Xilin Su Yufeng Li Minyan Zhang Peng Hu Maofeng Guo Aixing Li Ye Zhang Qiang Li Feng Yun |
| author_facet | Xilin Su Yufeng Li Minyan Zhang Peng Hu Maofeng Guo Aixing Li Ye Zhang Qiang Li Feng Yun |
| author_sort | Xilin Su |
| collection | DOAJ |
| description | A GaN ultraviolet photodetector with a petal-like β-Ga2O3 microcrystalline layer was prepared on the GaN template using electrochemical anodizing and annealing processes. The petal-like β-Ga2O3 microcrystalline layer was found to enhance the absorption of ultraviolet light and suppress the dark current, and a high responsivity from 230 nm (responsivity 8.5 A/W) to 400 nm (responsivity 0.1 A/W) was achieved by the photodetector. The rejection ratio of ultraviolet–visible light is greater than three orders of magnitude representing a high selectivity of ultraviolet light detection. The responsivity slopes of the photodetector under different biases were found to be strongly correlated with the wavelength of light, and the responsivity is much higher than that of conventional metal/insulator/metal wavelength identification photodetectors. This effective method of synthesizing β-Ga2O3 crystallites on GaN can be used to enhance the ultraviolet absorption of GaN photodetectors and improve the detection performance. |
| first_indexed | 2024-12-20T07:41:19Z |
| format | Article |
| id | doaj.art-d56ad71461d24daebf82e70471d120f4 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-20T07:41:19Z |
| publishDate | 2020-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-d56ad71461d24daebf82e70471d120f42022-12-21T19:48:08ZengAIP Publishing LLCAIP Advances2158-32262020-12-011012125107125107-710.1063/5.0028550GaN ultraviolet photodetector with petal-like β-Ga2O3 microcrystalline layerXilin Su0Yufeng Li1Minyan Zhang2Peng Hu3Maofeng Guo4Aixing Li5Ye Zhang6Qiang Li7Feng Yun8Shaanxi Key Laboratory of Photonics Technology for Information, Xi’an Jiaotong University, Xi’an 710049, ChinaShaanxi Key Laboratory of Photonics Technology for Information, Xi’an Jiaotong University, Xi’an 710049, ChinaShaanxi Key Laboratory of Photonics Technology for Information, Xi’an Jiaotong University, Xi’an 710049, ChinaShaanxi Key Laboratory of Photonics Technology for Information, Xi’an Jiaotong University, Xi’an 710049, ChinaShaanxi Key Laboratory of Photonics Technology for Information, Xi’an Jiaotong University, Xi’an 710049, ChinaShaanxi Key Laboratory of Photonics Technology for Information, Xi’an Jiaotong University, Xi’an 710049, ChinaShaanxi Key Laboratory of Photonics Technology for Information, Xi’an Jiaotong University, Xi’an 710049, ChinaShaanxi Key Laboratory of Photonics Technology for Information, Xi’an Jiaotong University, Xi’an 710049, ChinaInstitute of Advanced Optoelectronics, Xi’an Jiaotong University, Xi’an 710049, ChinaA GaN ultraviolet photodetector with a petal-like β-Ga2O3 microcrystalline layer was prepared on the GaN template using electrochemical anodizing and annealing processes. The petal-like β-Ga2O3 microcrystalline layer was found to enhance the absorption of ultraviolet light and suppress the dark current, and a high responsivity from 230 nm (responsivity 8.5 A/W) to 400 nm (responsivity 0.1 A/W) was achieved by the photodetector. The rejection ratio of ultraviolet–visible light is greater than three orders of magnitude representing a high selectivity of ultraviolet light detection. The responsivity slopes of the photodetector under different biases were found to be strongly correlated with the wavelength of light, and the responsivity is much higher than that of conventional metal/insulator/metal wavelength identification photodetectors. This effective method of synthesizing β-Ga2O3 crystallites on GaN can be used to enhance the ultraviolet absorption of GaN photodetectors and improve the detection performance.http://dx.doi.org/10.1063/5.0028550 |
| spellingShingle | Xilin Su Yufeng Li Minyan Zhang Peng Hu Maofeng Guo Aixing Li Ye Zhang Qiang Li Feng Yun GaN ultraviolet photodetector with petal-like β-Ga2O3 microcrystalline layer AIP Advances |
| title | GaN ultraviolet photodetector with petal-like β-Ga2O3 microcrystalline layer |
| title_full | GaN ultraviolet photodetector with petal-like β-Ga2O3 microcrystalline layer |
| title_fullStr | GaN ultraviolet photodetector with petal-like β-Ga2O3 microcrystalline layer |
| title_full_unstemmed | GaN ultraviolet photodetector with petal-like β-Ga2O3 microcrystalline layer |
| title_short | GaN ultraviolet photodetector with petal-like β-Ga2O3 microcrystalline layer |
| title_sort | gan ultraviolet photodetector with petal like β ga2o3 microcrystalline layer |
| url | http://dx.doi.org/10.1063/5.0028550 |
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