Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers
High-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2017-12-01
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| Series: | Science and Technology of Advanced Materials |
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| Online Access: | http://dx.doi.org/10.1080/14686996.2017.1336055 |
| _version_ | 1818336585189425152 |
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| author | Mihai Apreutesei Régis Debord Mohamed Bouras Philippe Regreny Claude Botella Aziz Benamrouche Adrian Carretero-Genevrier Jaume Gazquez Geneviève Grenet Stéphane Pailhès Guillaume Saint-Girons Romain Bachelet |
| author_facet | Mihai Apreutesei Régis Debord Mohamed Bouras Philippe Regreny Claude Botella Aziz Benamrouche Adrian Carretero-Genevrier Jaume Gazquez Geneviève Grenet Stéphane Pailhès Guillaume Saint-Girons Romain Bachelet |
| author_sort | Mihai Apreutesei |
| collection | DOAJ |
| description | High-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10−4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately –60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements. |
| first_indexed | 2024-12-13T14:41:39Z |
| format | Article |
| id | doaj.art-d5762c39ea874cb5b04a185b78ba8f6d |
| institution | Directory Open Access Journal |
| issn | 1468-6996 1878-5514 |
| language | English |
| last_indexed | 2024-12-13T14:41:39Z |
| publishDate | 2017-12-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Science and Technology of Advanced Materials |
| spelling | doaj.art-d5762c39ea874cb5b04a185b78ba8f6d2022-12-21T23:41:36ZengTaylor & Francis GroupScience and Technology of Advanced Materials1468-69961878-55142017-12-0118143043510.1080/14686996.2017.13360551336055Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometersMihai Apreutesei0Régis Debord1Mohamed Bouras2Philippe Regreny3Claude Botella4Aziz Benamrouche5Adrian Carretero-Genevrier6Jaume Gazquez7Geneviève Grenet8Stéphane Pailhès9Guillaume Saint-Girons10Romain Bachelet11Institut des Nanotechnologies de Lyon (INL) – CNRS UMR 5270Institut Lumière Matière (ILM) - CNRS UMR 5306Institut des Nanotechnologies de Lyon (INL) – CNRS UMR 5270Institut des Nanotechnologies de Lyon (INL) – CNRS UMR 5270Institut des Nanotechnologies de Lyon (INL) – CNRS UMR 5270Institut des Nanotechnologies de Lyon (INL) – CNRS UMR 5270Institut des Nanotechnologies de Lyon (INL) – CNRS UMR 5270Institut de Ciencia de Materials de Barcelona (ICMAB -CSIC)Institut des Nanotechnologies de Lyon (INL) – CNRS UMR 5270Institut Lumière Matière (ILM) - CNRS UMR 5306Institut des Nanotechnologies de Lyon (INL) – CNRS UMR 5270Institut des Nanotechnologies de Lyon (INL) – CNRS UMR 5270High-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10−4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately –60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements.http://dx.doi.org/10.1080/14686996.2017.1336055Functional oxidesThermoelectricityMolecular beam epitaxyLa-doped SrTiO3Integrated films |
| spellingShingle | Mihai Apreutesei Régis Debord Mohamed Bouras Philippe Regreny Claude Botella Aziz Benamrouche Adrian Carretero-Genevrier Jaume Gazquez Geneviève Grenet Stéphane Pailhès Guillaume Saint-Girons Romain Bachelet Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers Science and Technology of Advanced Materials Functional oxides Thermoelectricity Molecular beam epitaxy La-doped SrTiO3 Integrated films |
| title | Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers |
| title_full | Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers |
| title_fullStr | Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers |
| title_full_unstemmed | Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers |
| title_short | Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers |
| title_sort | thermoelectric la doped srtio3 epitaxial layers with single crystal quality from nano to micrometers |
| topic | Functional oxides Thermoelectricity Molecular beam epitaxy La-doped SrTiO3 Integrated films |
| url | http://dx.doi.org/10.1080/14686996.2017.1336055 |
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