SiC-on-insulator based lateral power device and it’ s analytical models

SiC-on-insulator based lateral power device and it’ s analytical models

This paper proposes the concept of SiC-on-insulator (SiCOI) lateral power device and its analytical models. The SiCOI technology provides dielectric isolation and improves the vertical breakdown. The analytical models provide the physic insight of the surface potential and electric field distributio...

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Bibliographic Details
Main Authors: Jiafei Yao, Ang Li, Yuao Liu, Ziwei Hu, Man Li, Kemeng Yang, Jun Zhang, Jing Chen, Maolin Zhang, Yufeng Guo
Format: Article
Language:English
Published: Elsevier 2024-03-01
Series:Results in Physics
Subjects:
SiCOI
Power device
Analytical model
Electric field
Breakdown voltage
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379724001591

Internet

http://www.sciencedirect.com/science/article/pii/S2211379724001591

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