SiC-on-insulator based lateral power device and it’ s analytical models
This paper proposes the concept of SiC-on-insulator (SiCOI) lateral power device and its analytical models. The SiCOI technology provides dielectric isolation and improves the vertical breakdown. The analytical models provide the physic insight of the surface potential and electric field distributio...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-03-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379724001591 |
| _version_ | 1827316631449108480 |
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| author | Jiafei Yao Ang Li Yuao Liu Ziwei Hu Man Li Kemeng Yang Jun Zhang Jing Chen Maolin Zhang Yufeng Guo |
| author_facet | Jiafei Yao Ang Li Yuao Liu Ziwei Hu Man Li Kemeng Yang Jun Zhang Jing Chen Maolin Zhang Yufeng Guo |
| author_sort | Jiafei Yao |
| collection | DOAJ |
| description | This paper proposes the concept of SiC-on-insulator (SiCOI) lateral power device and its analytical models. The SiCOI technology provides dielectric isolation and improves the vertical breakdown. The analytical models provide the physic insight of the surface potential and electric field distributions for both full and partial depletion cases. The optimal breakdown voltage and doping concentration are deduced to analyze the breakdown mechanism qualitatively. The specific on-resistance in the drift region was also calculated to analyze the conduction characteristics. The influences of the structure parameters on the performances of the SiCOI lateral power device are investigated by the analytical model and numerical simulation. The analytical results of the proposed model are well agreement with the numerical results, confirming the validity of the proposed unified analytical model. Both the analytical and numerical results provide the physical explanation and effective solution for optimizing the electric field and improving breakdown voltage for the SiCOI lateral power device. |
| first_indexed | 2024-03-07T23:39:47Z |
| format | Article |
| id | doaj.art-d588e8feda8c429eb5f6547f12413461 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-04-24T23:18:11Z |
| publishDate | 2024-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-d588e8feda8c429eb5f6547f124134612024-03-17T07:53:37ZengElsevierResults in Physics2211-37972024-03-0158107477SiC-on-insulator based lateral power device and it’ s analytical modelsJiafei Yao0Ang Li1Yuao Liu2Ziwei Hu3Man Li4Kemeng Yang5Jun Zhang6Jing Chen7Maolin Zhang8Yufeng Guo9School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, China; Nantong Institute of Nanjing University of Posts and Telecommunications, Nantong, ChinaSchool of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, China; Nantong Institute of Nanjing University of Posts and Telecommunications, Nantong, ChinaSchool of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, China; Nantong Institute of Nanjing University of Posts and Telecommunications, Nantong, ChinaSchool of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, China; Nantong Institute of Nanjing University of Posts and Telecommunications, Nantong, ChinaSchool of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, ChinaSchool of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, ChinaSchool of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, ChinaSchool of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, ChinaSchool of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, ChinaSchool of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China; National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology, Nanjing, China; Corresponding author at: School of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China.This paper proposes the concept of SiC-on-insulator (SiCOI) lateral power device and its analytical models. The SiCOI technology provides dielectric isolation and improves the vertical breakdown. The analytical models provide the physic insight of the surface potential and electric field distributions for both full and partial depletion cases. The optimal breakdown voltage and doping concentration are deduced to analyze the breakdown mechanism qualitatively. The specific on-resistance in the drift region was also calculated to analyze the conduction characteristics. The influences of the structure parameters on the performances of the SiCOI lateral power device are investigated by the analytical model and numerical simulation. The analytical results of the proposed model are well agreement with the numerical results, confirming the validity of the proposed unified analytical model. Both the analytical and numerical results provide the physical explanation and effective solution for optimizing the electric field and improving breakdown voltage for the SiCOI lateral power device.http://www.sciencedirect.com/science/article/pii/S2211379724001591SiCOIPower deviceAnalytical modelElectric fieldBreakdown voltage |
| spellingShingle | Jiafei Yao Ang Li Yuao Liu Ziwei Hu Man Li Kemeng Yang Jun Zhang Jing Chen Maolin Zhang Yufeng Guo SiC-on-insulator based lateral power device and it’ s analytical models Results in Physics SiCOI Power device Analytical model Electric field Breakdown voltage |
| title | SiC-on-insulator based lateral power device and it’ s analytical models |
| title_full | SiC-on-insulator based lateral power device and it’ s analytical models |
| title_fullStr | SiC-on-insulator based lateral power device and it’ s analytical models |
| title_full_unstemmed | SiC-on-insulator based lateral power device and it’ s analytical models |
| title_short | SiC-on-insulator based lateral power device and it’ s analytical models |
| title_sort | sic on insulator based lateral power device and it s analytical models |
| topic | SiCOI Power device Analytical model Electric field Breakdown voltage |
| url | http://www.sciencedirect.com/science/article/pii/S2211379724001591 |
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