Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy
The extended wavelength InGaAs material (2.3 μm) was prepared by introducing compositionally undulating step-graded InAs<sub>y</sub>P<sub>1−y</sub> buffers with unequal layer thickness grown by solid-source molecular beam epitaxy (MBE). The properties of the extended waveleng...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-12-01
|
| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/11/12/1590 |