Enabling focused ion beam sample preparation for application in reverse tip sample scanning probe microscopy

Focused ion beam (FIB) has become a powerful tool for transmission electron microscopy sample preparation in the nanoelectronics industry and has in recent years also shown its benefits for specific preparation steps in electrical scanning probe microscopy (SPM). Most recently, a novel SPM approach...

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Main Authors: P. Lagrain, K. Paulussen, E. Grieten, G. Van den Bosch, S. Rachidi, D. Yudistira, L. Wouters, T. Hantschel
Format: Article
Language:English
Published: Elsevier 2024-06-01
Series:Micro and Nano Engineering
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2590007224000108
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author P. Lagrain
K. Paulussen
E. Grieten
G. Van den Bosch
S. Rachidi
D. Yudistira
L. Wouters
T. Hantschel
author_facet P. Lagrain
K. Paulussen
E. Grieten
G. Van den Bosch
S. Rachidi
D. Yudistira
L. Wouters
T. Hantschel
author_sort P. Lagrain
collection DOAJ
description Focused ion beam (FIB) has become a powerful tool for transmission electron microscopy sample preparation in the nanoelectronics industry and has in recent years also shown its benefits for specific preparation steps in electrical scanning probe microscopy (SPM). Most recently, a novel SPM approach – so-called reverse tip sample (RTS) SPM – has been proposed in which the position of sample and tip are switched compared to standard SPM; in RTS SPM the sample is attached to the end of a cantilever beam. To achieve this configuration, the region of interest must first be extracted from a substrate and then needs to be reliably fixed to the cantilever by FIB. Therefore, we have explored and developed dedicated FIB preparation methods for RTS SPM in this work. Our established procedures ensure a strong mechanical and good electrical connection of the sample to the cantilever for both cross-section and top view sample preparation. Furthermore, we introduce an approach for mounting samples from a full wafer size workflow. This paper presents the developed FIB procedures and discusses the quality and stability of all mounted samples and their electrical evaluation in RTS SPM.
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spelling doaj.art-d5a4ea81a68e4d849bd039a490c671282024-03-30T04:39:55ZengElsevierMicro and Nano Engineering2590-00722024-06-0123100247Enabling focused ion beam sample preparation for application in reverse tip sample scanning probe microscopyP. Lagrain0K. Paulussen1E. Grieten2G. Van den Bosch3S. Rachidi4D. Yudistira5L. Wouters6T. Hantschel7Corresponding author.; Imec, Kapeldreef 75, B-3001 Leuven, BelgiumImec, Kapeldreef 75, B-3001 Leuven, BelgiumImec, Kapeldreef 75, B-3001 Leuven, BelgiumImec, Kapeldreef 75, B-3001 Leuven, BelgiumImec, Kapeldreef 75, B-3001 Leuven, BelgiumImec, Kapeldreef 75, B-3001 Leuven, BelgiumImec, Kapeldreef 75, B-3001 Leuven, BelgiumImec, Kapeldreef 75, B-3001 Leuven, BelgiumFocused ion beam (FIB) has become a powerful tool for transmission electron microscopy sample preparation in the nanoelectronics industry and has in recent years also shown its benefits for specific preparation steps in electrical scanning probe microscopy (SPM). Most recently, a novel SPM approach – so-called reverse tip sample (RTS) SPM – has been proposed in which the position of sample and tip are switched compared to standard SPM; in RTS SPM the sample is attached to the end of a cantilever beam. To achieve this configuration, the region of interest must first be extracted from a substrate and then needs to be reliably fixed to the cantilever by FIB. Therefore, we have explored and developed dedicated FIB preparation methods for RTS SPM in this work. Our established procedures ensure a strong mechanical and good electrical connection of the sample to the cantilever for both cross-section and top view sample preparation. Furthermore, we introduce an approach for mounting samples from a full wafer size workflow. This paper presents the developed FIB procedures and discusses the quality and stability of all mounted samples and their electrical evaluation in RTS SPM.http://www.sciencedirect.com/science/article/pii/S2590007224000108Focused ion beamFIB/SEMDual-beamElectrical SPMSSRMC-AFM
spellingShingle P. Lagrain
K. Paulussen
E. Grieten
G. Van den Bosch
S. Rachidi
D. Yudistira
L. Wouters
T. Hantschel
Enabling focused ion beam sample preparation for application in reverse tip sample scanning probe microscopy
Micro and Nano Engineering
Focused ion beam
FIB/SEM
Dual-beam
Electrical SPM
SSRM
C-AFM
title Enabling focused ion beam sample preparation for application in reverse tip sample scanning probe microscopy
title_full Enabling focused ion beam sample preparation for application in reverse tip sample scanning probe microscopy
title_fullStr Enabling focused ion beam sample preparation for application in reverse tip sample scanning probe microscopy
title_full_unstemmed Enabling focused ion beam sample preparation for application in reverse tip sample scanning probe microscopy
title_short Enabling focused ion beam sample preparation for application in reverse tip sample scanning probe microscopy
title_sort enabling focused ion beam sample preparation for application in reverse tip sample scanning probe microscopy
topic Focused ion beam
FIB/SEM
Dual-beam
Electrical SPM
SSRM
C-AFM
url http://www.sciencedirect.com/science/article/pii/S2590007224000108
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