Crystal orientation of epitaxial film deposited on silicon surface

Crystal orientation of epitaxial film deposited on silicon surface

Abstract Direct growth of oxide film on silicon is usually prevented by extensive diffusion or chemical reaction between silicon (Si) and oxide materials. Thermodynamic stability of binary oxides is comprehensively investigated on Si substrates and shows possibility of chemical reaction of oxide mat...

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Main Authors: Satoru Kaneko, Takashi Tokumasu, Manabu Yasui, Masahito Kurouchi, Daishi Shiojiri, Shigeo Yasuhara, Sumanta Kumar Sahoo, Musa Mutlu Can, Ruei Sung Yu, Kripasindhu Sardar, Masahiro Yoshimura, Masaki Azuma, Akifumi Matsuda, Mamoru Yoshimoto
Format: Article
Language:English
Published: Nature Portfolio 2024-05-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-024-61564-8

Internet

https://doi.org/10.1038/s41598-024-61564-8

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