A Compact Model Based on Bardeen’s Transfer Hamiltonian Formalism for Silicon Single Electron Transistors

A Compact Model Based on Bardeen’s Transfer Hamiltonian Formalism for Silicon Single Electron Transistors

Presented is a physics-based compact model for a silicon-nanopillar single-electron transistor (SET). Tunneling currents are calculated using a master equation approach with rates obtained via the transfer Hamiltonian formalism. The quantum confinement of electrons on the quantum dot is taken into c...

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Bibliographic Details
Main Author: Fabian J. Klupfel
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
Circuit simulation
compact model
single electron transistors
SPICE
Online Access:https://ieeexplore.ieee.org/document/8746224/

Internet

https://ieeexplore.ieee.org/document/8746224/

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