Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method

Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method

Silicon carbide (SiC) polycrystalline powder. As the raw material for SiC single-crystal growth through the physical vapor transport (PVT) method, its surface size and shape have a great influence on growth of crystal. The surface size and shape of the evaporation area filled with polycrystalline po...

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Bibliographic Details
Main Authors: Yu Zhang, Xin Wen, Nuofu Chen, Fang Zhang, Jikun Chen, Wenrui Hu
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Crystals
Subjects:
numerical simulation
SiC
single crystal growth
heat transfer
fluid flow
Online Access:https://www.mdpi.com/2073-4352/14/2/118

Internet

https://www.mdpi.com/2073-4352/14/2/118

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