Lasing in strained germanium microbridges

Germanium (based) lasers are a promising route towards a fully CMOS-compatible light source, key to the further development of silicon photonics. Here, the authors realize lasing from strained germanium microbridges up to 100 K, finding a quantum efficiency close to 100%.

Bibliographic Details
Main Authors:	F. T. Armand Pilon, A. Lyasota, Y.-M. Niquet, V. Reboud, V. Calvo, N. Pauc, J. Widiez, C. Bonzon, J. M. Hartmann, A. Chelnokov, J. Faist, H. Sigg
Format:	Article
Language:	English
Published:	Nature Portfolio 2019-06-01
Series:	Nature Communications
Online Access:	https://doi.org/10.1038/s41467-019-10655-6

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https://doi.org/10.1038/s41467-019-10655-6

Lasing in strained germanium microbridges

Internet

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