Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films
Hillock-free thick InGaN layers were grown on N-polar GaN on sapphire by metal organic vapor phase epitaxy using a digital growth scheme and H<sub>2</sub> as surfactant. Introducing Mg to act as an additional surfactant and optimizing the H<sub>2</sub> pulse time, In composit...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-05-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/10/1182 |