Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films
Hillock-free thick InGaN layers were grown on N-polar GaN on sapphire by metal organic vapor phase epitaxy using a digital growth scheme and H<sub>2</sub> as surfactant. Introducing Mg to act as an additional surfactant and optimizing the H<sub>2</sub> pulse time, In composit...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-05-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/10/10/1182 |
| Summary: | Hillock-free thick InGaN layers were grown on N-polar GaN on sapphire by metal organic vapor phase epitaxy using a digital growth scheme and H<sub>2</sub> as surfactant. Introducing Mg to act as an additional surfactant and optimizing the H<sub>2</sub> pulse time, In compositions up to 17% were obtained in 100 nm thick epilayers. Although Mg adversely affected the In incorporation, it enabled maintenance of a good surface morphology while decreasing the InGaN growth temperature, resulting in a net increase in In composition. The parameter space of growth temperature and Mg precursor flow to obtain hillock-free epilayers was mapped out. |
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| ISSN: | 2079-9292 |