Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films
Hillock-free thick InGaN layers were grown on N-polar GaN on sapphire by metal organic vapor phase epitaxy using a digital growth scheme and H<sub>2</sub> as surfactant. Introducing Mg to act as an additional surfactant and optimizing the H<sub>2</sub> pulse time, In composit...
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| Format: | Article |
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MDPI AG
2021-05-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/10/10/1182 |
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| author | Nirupam Hatui Athith Krishna Shubhra S. Pasayat Stacia Keller Umesh K. Mishra |
| author_facet | Nirupam Hatui Athith Krishna Shubhra S. Pasayat Stacia Keller Umesh K. Mishra |
| author_sort | Nirupam Hatui |
| collection | DOAJ |
| description | Hillock-free thick InGaN layers were grown on N-polar GaN on sapphire by metal organic vapor phase epitaxy using a digital growth scheme and H<sub>2</sub> as surfactant. Introducing Mg to act as an additional surfactant and optimizing the H<sub>2</sub> pulse time, In compositions up to 17% were obtained in 100 nm thick epilayers. Although Mg adversely affected the In incorporation, it enabled maintenance of a good surface morphology while decreasing the InGaN growth temperature, resulting in a net increase in In composition. The parameter space of growth temperature and Mg precursor flow to obtain hillock-free epilayers was mapped out. |
| first_indexed | 2024-03-10T11:23:22Z |
| format | Article |
| id | doaj.art-d5ee8e4df22d4e38aa0d405ef6e81bdc |
| institution | Directory Open Access Journal |
| issn | 2079-9292 |
| language | English |
| last_indexed | 2024-03-10T11:23:22Z |
| publishDate | 2021-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Electronics |
| spelling | doaj.art-d5ee8e4df22d4e38aa0d405ef6e81bdc2023-11-21T19:53:02ZengMDPI AGElectronics2079-92922021-05-011010118210.3390/electronics10101182Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN FilmsNirupam Hatui0Athith Krishna1Shubhra S. Pasayat2Stacia Keller3Umesh K. Mishra4Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USADepartment of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USADepartment of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USADepartment of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USADepartment of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USAHillock-free thick InGaN layers were grown on N-polar GaN on sapphire by metal organic vapor phase epitaxy using a digital growth scheme and H<sub>2</sub> as surfactant. Introducing Mg to act as an additional surfactant and optimizing the H<sub>2</sub> pulse time, In compositions up to 17% were obtained in 100 nm thick epilayers. Although Mg adversely affected the In incorporation, it enabled maintenance of a good surface morphology while decreasing the InGaN growth temperature, resulting in a net increase in In composition. The parameter space of growth temperature and Mg precursor flow to obtain hillock-free epilayers was mapped out.https://www.mdpi.com/2079-9292/10/10/1182InGaNN-polarMOVPE |
| spellingShingle | Nirupam Hatui Athith Krishna Shubhra S. Pasayat Stacia Keller Umesh K. Mishra Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films Electronics InGaN N-polar MOVPE |
| title | Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films |
| title_full | Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films |
| title_fullStr | Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films |
| title_full_unstemmed | Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films |
| title_short | Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films |
| title_sort | metal organic vapor phase epitaxy of thick n polar ingan films |
| topic | InGaN N-polar MOVPE |
| url | https://www.mdpi.com/2079-9292/10/10/1182 |
| work_keys_str_mv | AT nirupamhatui metalorganicvaporphaseepitaxyofthicknpolaringanfilms AT athithkrishna metalorganicvaporphaseepitaxyofthicknpolaringanfilms AT shubhraspasayat metalorganicvaporphaseepitaxyofthicknpolaringanfilms AT staciakeller metalorganicvaporphaseepitaxyofthicknpolaringanfilms AT umeshkmishra metalorganicvaporphaseepitaxyofthicknpolaringanfilms |