Procesos de oxidación de Si mediante plasma de resonancia ciclotrónica de electrones

Procesos de oxidación de Si mediante plasma de resonancia ciclotrónica de electrones

MIS structures have been fabricated on Si (111) by a two-step process: first an exposition of the Si substrates to an ECR oxygen plasma was performed, which yields a layer of SiOx (in the following PO-SiOx); this process was followed by an ECR plasma silicon nitride deposition (SiN1.55:H). The resul...

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Bibliographic Details
Main Authors: San Andrés, E., del Prado, A., Blázquez, A. J., Mártil, I., González-Díaz, G.
Format: Article
Language:English
Published: Elsevier 2004-04-01
Series:Boletín de la Sociedad Española de Cerámica y Vidrio
Subjects:
ECR plasma
plasma oxidation
suboxide of Si
dielectric stack
Plasma ECR
oxidación por plasma
subóxido de Si
dieléctrico apilado
Online Access:http://ceramicayvidrio.revistas.csic.es/index.php/ceramicayvidrio/article/view/546/565

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http://ceramicayvidrio.revistas.csic.es/index.php/ceramicayvidrio/article/view/546/565

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