Magnetic Near-Field Strength Prediction of a Power Module by Measurement-Independent Modeling of Its Structure

This paper presents a simulation scheme based on the S-parameters for simultaneously predicting the circuit operation of a power module (PM) and its consequent magnetic near-field (NF) strength. The PM comprises silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs). The...

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Bibliographic Details
Main Authors: Junichi Kashiwagi, Hiroyuki Sakairi, Hirotaka Otake, Yusuke Nakakohara, Ken Nakahara
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9103049/