A promising routine to fabricate GeSi nanowires via self-assembly on miscut Si (001) substrates
<p>Abstract</p> <p/> <p>Very small and compactly arranged GeSi nanowires could self-assembled on vicinal Si (001) substrates with ~8° off toward ⟨110⟩ during Ge deposition. The nanowires were all oriented along the miscut direction. The small ra...
मुख्य लेखकों: | , , , , |
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स्वरूप: | लेख |
भाषा: | English |
प्रकाशित: |
SpringerOpen
2011-01-01
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श्रृंखला: | Nanoscale Research Letters |
ऑनलाइन पहुंच: | http://www.nanoscalereslett.com/content/6/1/322 |