LPE Growth of Single Crystalline Film Scintillators Based on Ce3+ Doped Tb3−xGdxAl5−yGayO12 Mixed Garnets

LPE Growth of Single Crystalline Film Scintillators Based on Ce3+ Doped Tb3−xGdxAl5−yGayO12 Mixed Garnets

The growth of single crystalline films (SCFs) with excellent scintillation properties based on the Tb1.5Gd1.5Al5−yGayO12:Ce mixed garnet at y = 2–3.85 by Liquid Phase Epitaxy (LPE) method onto Gd3Al2.5Ga2.5O12 (GAGG) substrates from BaO based flux is reported in this work. We have found that the bes...

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Bibliographic Details
Main Authors: Vitalii Gorbenko, Tetiana Zorenko, Sandra Witkiewicz, Kazimierz Paprocki, Oleg Sidletskiy, Alexander Fedorov, Paweł Bilski, Anna Twardak, Yuriy Zorenko
Format: Article
Language:English
Published: MDPI AG 2017-08-01
Series:Crystals
Subjects:
liquid phase epitaxy
single crystalline films
scintillators
mixed garnets
Tb3+ cations
Online Access:https://www.mdpi.com/2073-4352/7/9/262

Internet

https://www.mdpi.com/2073-4352/7/9/262

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