Interface Optimization and Performance Enhancement of Er<sub>2</sub>O<sub>3</sub>-Based MOS Devices by ALD-Derived Al<sub>2</sub>O<sub>3</sub> Passivation Layers and Annealing Treatment

Interface Optimization and Performance Enhancement of Er<sub>2</sub>O<sub>3</sub>-Based MOS Devices by ALD-Derived Al<sub>2</sub>O<sub>3</sub> Passivation Layers and Annealing Treatment

In this paper, the effect of atomic layer deposition (ALD)-derived Al<sub>2</sub>O<sub>3</sub> passivation layers and annealing temperatures on the interfacial chemistry and transport properties of sputtering-deposited Er<sub>2</sub>O<sub>3</sub> high-...

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Bibliographic Details
Main Authors: Qiuju Wu, Qing Yu, Gang He, Wenhao Wang, Jinyu Lu, Bo Yao, Shiyan Liu, Zebo Fang
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Nanomaterials
Subjects:
Er<sub>2</sub>O<sub>3</sub> thin film
interface state density
conduction mechanisms
high-k gate dielectric
Online Access:https://www.mdpi.com/2079-4991/13/11/1740

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https://www.mdpi.com/2079-4991/13/11/1740

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