Two dimensional MoF3 and Janus Mo2F3X3(X = Cl, Br, I): intrinsic ferromagnetic semiconductor, large perpendicular magnetic anisotropy, and hole-induced room-temperature ferromagnetism

Two dimensional MoF3 and Janus Mo2F3X3(X = Cl, Br, I): intrinsic ferromagnetic semiconductor, large perpendicular magnetic anisotropy, and hole-induced room-temperature ferromagnetism

Two-dimensional (2D) ferromagnetic (FM) semiconductors with high Curie temperature ( T _c ) and large perpendicular magnetic anisotropy (PMA) are promising for developing next-generation magnetic storage devices. In this work, we investigated the structural, electronic, and magnetic properties of Mo...

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Bibliographic Details
Main Authors: Chen Zhou, Wenhui Wan, Yanfeng Ge, Yong liu
Format: Article
Language:English
Published: IOP Publishing 2024-01-01
Series:Journal of Physics Communications
Subjects:
two-dimensional material
ferromagnetic semiconductor
magnetic anisotropy
first-principle calculation
electronic structure
Online Access:https://doi.org/10.1088/2399-6528/ad9f1e

Internet

https://doi.org/10.1088/2399-6528/ad9f1e

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