Improving RF characteristic and suppress gate leakage in normally-off GaN-HEMTs using negative polarization effect and floating gate for millimeter-wave systems

Improving RF characteristic and suppress gate leakage in normally-off GaN-HEMTs using negative polarization effect and floating gate for millimeter-wave systems

This article demonstrates the effect of reverse gradient barrier layer and floating gate structure on DC and RF performance of GaN-based HEMTs. In terms of power characteristics, using reverse gradient barrier and floating gate, the GaN-HEMTs with Lg of 240 nm and S-D spacing of 8.4 μm demonstrated...

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Bibliographic Details
Main Authors: Ruipeng Lv, Huiqin Sun, Longfei Yang, Zhen Liu, Yuanhao Zhang, Yuan Li, Yong Huang, Zhiyou Guo
Format: Article
Language:English
Published: Elsevier 2024-04-01
Series:Results in Physics
Subjects:
Gradient barrier
Gate leakage
Floating gate
RF GaN HEMT
High linearity
Negative polarization effect
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379724002092

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http://www.sciencedirect.com/science/article/pii/S2211379724002092

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