Determination of group velocity based on nanoindentation using Si and SiO2/Si wafers

The analyses of thermal transport properties can help improve the performance of high-tech semiconducting devices, such as thermoelectric generators and electronic devices. However, methods to measure thermal transport properties are limited, especially the group velocity and phonon mean free path (...

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Bibliographic Details
Main Authors: Oga Norimasa, Masataka Hase, Ryotaro Mori, Mai Hayamizu, Hiroshi Murotani, Koji Miyazaki, Masayuki Takashiri
Format: Article
Language:English
Published: AIP Publishing LLC 2021-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0055581