Three-Port Optical Phase-Shifters and Modulators With Ultra-High Modulation Efficiency, Positive RF-Linking Gain, and Low Residual Amplitude Modulation
A three-port optical phase-shifter and Mach-Zehnder modulator (MZM) based on PNP-type bipolar junction transistor (BJT) is demonstrated. Significant plasma (injected carrier) induced changes of the refractive index for the optical waveguide become possible with an extremely small driving-voltage and...
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| Format: | Article |
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IEEE
2020-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/9079834/ |
| _version_ | 1818664516928405504 |
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| author | Rui Lin Chao Zohauddin Ahmad Jyehong Chen Yinchieh Lai Jin-Wei Shi |
| author_facet | Rui Lin Chao Zohauddin Ahmad Jyehong Chen Yinchieh Lai Jin-Wei Shi |
| author_sort | Rui Lin Chao |
| collection | DOAJ |
| description | A three-port optical phase-shifter and Mach-Zehnder modulator (MZM) based on PNP-type bipolar junction transistor (BJT) is demonstrated. Significant plasma (injected carrier) induced changes of the refractive index for the optical waveguide become possible with an extremely small driving-voltage and a compact device size during operation of this BJT between the saturation and forward active modes. Devices with a standard MZM structure and a small foot-print (0.5 mm) exhibit a moderate optical insertion loss (2 dB), extremely small V<sub>π</sub> (0.18V) and P<sub>π</sub> (0.21mW), fast rise/fall time (~1ns), and a residue-amplitudemodulation (RAM) as small as 0.18 dB. Furthermore, thanks to the ultra-high modulation efficiency characteristic of our device, a +4.0 dB net RF-linking gain can be obtained under dynamic operation. Compared to 2-port (base-collector) forward bias operation, under three-port operation, the extra bias current from the base-emitter junction provides a lower V<sub>π</sub> (0.18 vs. 0.22 V), a smaller RAM (0.18 vs. 0.6 dB), and a larger RF-linking gain (+4 vs. -3.2 dB). The superior performances of the three-port to two-port operations can be attributed to the additional forward bias B-E junction being able to provide more injected carriers to induce stronger plasma effects for optical phase-shifting. |
| first_indexed | 2024-12-17T05:33:59Z |
| format | Article |
| id | doaj.art-d6d1cf0fa50944d49284bbf8c94a6ae8 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-12-17T05:33:59Z |
| publishDate | 2020-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-d6d1cf0fa50944d49284bbf8c94a6ae82022-12-21T22:01:40ZengIEEEIEEE Access2169-35362020-01-018808368084110.1109/ACCESS.2020.29909569079834Three-Port Optical Phase-Shifters and Modulators With Ultra-High Modulation Efficiency, Positive RF-Linking Gain, and Low Residual Amplitude ModulationRui Lin Chao0Zohauddin Ahmad1Jyehong Chen2Yinchieh Lai3Jin-Wei Shi4https://orcid.org/0000-0003-0139-514XDepartment of Photonics, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, TaiwanDepartment of Electrical Engineering, National Central University, Taoyuan City, TaiwanDepartment of Photonics, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, TaiwanDepartment of Photonics, College of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, TaiwanDepartment of Electrical Engineering, National Central University, Taoyuan City, TaiwanA three-port optical phase-shifter and Mach-Zehnder modulator (MZM) based on PNP-type bipolar junction transistor (BJT) is demonstrated. Significant plasma (injected carrier) induced changes of the refractive index for the optical waveguide become possible with an extremely small driving-voltage and a compact device size during operation of this BJT between the saturation and forward active modes. Devices with a standard MZM structure and a small foot-print (0.5 mm) exhibit a moderate optical insertion loss (2 dB), extremely small V<sub>π</sub> (0.18V) and P<sub>π</sub> (0.21mW), fast rise/fall time (~1ns), and a residue-amplitudemodulation (RAM) as small as 0.18 dB. Furthermore, thanks to the ultra-high modulation efficiency characteristic of our device, a +4.0 dB net RF-linking gain can be obtained under dynamic operation. Compared to 2-port (base-collector) forward bias operation, under three-port operation, the extra bias current from the base-emitter junction provides a lower V<sub>π</sub> (0.18 vs. 0.22 V), a smaller RAM (0.18 vs. 0.6 dB), and a larger RF-linking gain (+4 vs. -3.2 dB). The superior performances of the three-port to two-port operations can be attributed to the additional forward bias B-E junction being able to provide more injected carriers to induce stronger plasma effects for optical phase-shifting.https://ieeexplore.ieee.org/document/9079834/Optical phase shifterphotonics integrated circuitsRF-linking gainsilicon photonics |
| spellingShingle | Rui Lin Chao Zohauddin Ahmad Jyehong Chen Yinchieh Lai Jin-Wei Shi Three-Port Optical Phase-Shifters and Modulators With Ultra-High Modulation Efficiency, Positive RF-Linking Gain, and Low Residual Amplitude Modulation IEEE Access Optical phase shifter photonics integrated circuits RF-linking gain silicon photonics |
| title | Three-Port Optical Phase-Shifters and Modulators With Ultra-High Modulation Efficiency, Positive RF-Linking Gain, and Low Residual Amplitude Modulation |
| title_full | Three-Port Optical Phase-Shifters and Modulators With Ultra-High Modulation Efficiency, Positive RF-Linking Gain, and Low Residual Amplitude Modulation |
| title_fullStr | Three-Port Optical Phase-Shifters and Modulators With Ultra-High Modulation Efficiency, Positive RF-Linking Gain, and Low Residual Amplitude Modulation |
| title_full_unstemmed | Three-Port Optical Phase-Shifters and Modulators With Ultra-High Modulation Efficiency, Positive RF-Linking Gain, and Low Residual Amplitude Modulation |
| title_short | Three-Port Optical Phase-Shifters and Modulators With Ultra-High Modulation Efficiency, Positive RF-Linking Gain, and Low Residual Amplitude Modulation |
| title_sort | three port optical phase shifters and modulators with ultra high modulation efficiency positive rf linking gain and low residual amplitude modulation |
| topic | Optical phase shifter photonics integrated circuits RF-linking gain silicon photonics |
| url | https://ieeexplore.ieee.org/document/9079834/ |
| work_keys_str_mv | AT ruilinchao threeportopticalphaseshiftersandmodulatorswithultrahighmodulationefficiencypositiverflinkinggainandlowresidualamplitudemodulation AT zohauddinahmad threeportopticalphaseshiftersandmodulatorswithultrahighmodulationefficiencypositiverflinkinggainandlowresidualamplitudemodulation AT jyehongchen threeportopticalphaseshiftersandmodulatorswithultrahighmodulationefficiencypositiverflinkinggainandlowresidualamplitudemodulation AT yinchiehlai threeportopticalphaseshiftersandmodulatorswithultrahighmodulationefficiencypositiverflinkinggainandlowresidualamplitudemodulation AT jinweishi threeportopticalphaseshiftersandmodulatorswithultrahighmodulationefficiencypositiverflinkinggainandlowresidualamplitudemodulation |