Trap-assisted monolayer ReSe2/Si heterojunction with high photoconductive gain and self-driven broadband photodetector.

Trap-assisted monolayer ReSe2/Si heterojunction with high photoconductive gain and self-driven broadband photodetector.

The development of photodetectors is crucial in fields such as optical communication, image sensing, medical devices and military equipment, where high sensitivity is paramount. We fabricated an ambipolar photodiode using monolayer triclinic ReSe2, synthesized by chemical vapor deposition on p-type...

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Bibliographic Details
Main Authors: Beomsu Jo, Kanghoon Seo, Kyumin Park, Chaewon Jeong, Bathalavaram Poornaprakash, Moonsang Lee, Singiri Ramu, Myung Gwan Hahm, Young Lae Kim
Format: Article
Language:English
Published: Frontiers Media S.A. 2024-02-01
Series:Frontiers in Materials
Subjects:
ReSe2
photodetector
heterojunction
high photoconductive gain
broadband photodetector
Online Access:https://www.frontiersin.org/articles/10.3389/fmats.2024.1354522/full

Internet

https://www.frontiersin.org/articles/10.3389/fmats.2024.1354522/full

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