Study on Characteristics of Enhancement-Mode Gallium-Nitride High-Electron-Mobility Transistor for the Design of Gate Drivers
An enhancement-mode gallium-nitride high-electron-mobility transistor (E-mode GaN HEMT) operated at high frequency is highly prone to current spikes (<i>di/dt</i>) and voltage spikes (<i>dv/dt</i>) in the parasitic inductor of its circuit, resulting in damage to the power swi...
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| Format: | Article |
| Language: | English |
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MDPI AG
2020-09-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/9/10/1573 |