Grain boundary engineering of organic semiconductor films in organic transistors

Grain boundary engineering of organic semiconductor films in organic transistors

Abstract Organic field‐effect transistors (OFETs) show great application potential in organic electronic and optoelectronic fields due to their excellent mechanical flexibility, low cost, and solution processing. However, grain boundaries (GBs) disrupt the aggregation state of organic semiconductor...

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Bibliographic Details
Main Authors: Yanpeng Wang, Shougang Sun, Yinan Huang, Yao Fu, Jiannan Qi, Kai Tie, Zhongwu Wang, Fei Jiao, Rongmei Si, Xiaosong Chen, Liqiang Li, Wenping Hu
Format: Article
Language:English
Published: Wiley 2023-12-01
Series:Aggregate
Subjects:
aggregation states
electrical performance
grain boundaries
organic field‐effect transistors
organic semiconductors
stability
Online Access:https://doi.org/10.1002/agt2.379

Internet

https://doi.org/10.1002/agt2.379

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