Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode
A 4H-SiC MOSFET with p-type region injection and integrated split gate and heterojunction diode is proposed in this paper. Compared with the conventional MOSFET, the proposed structure has a lower on-resistance and switching loss. And the gate oxide layer has been well protected by the p-type region...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9832970/ |