Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode
A 4H-SiC MOSFET with p-type region injection and integrated split gate and heterojunction diode is proposed in this paper. Compared with the conventional MOSFET, the proposed structure has a lower on-resistance and switching loss. And the gate oxide layer has been well protected by the p-type region...
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| Format: | Article |
| Language: | English |
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IEEE
2022-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/9832970/ |
| _version_ | 1818472106246012928 |
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| author | Hai-Yong Xu Ying Wang Meng-Tian Bao Fei Cao |
| author_facet | Hai-Yong Xu Ying Wang Meng-Tian Bao Fei Cao |
| author_sort | Hai-Yong Xu |
| collection | DOAJ |
| description | A 4H-SiC MOSFET with p-type region injection and integrated split gate and heterojunction diode is proposed in this paper. Compared with the conventional MOSFET, the proposed structure has a lower on-resistance and switching loss. And the gate oxide layer has been well protected by the p-type region, which reduces the electric field in gate oxide layer at the off-state. The on-resistance of device can be greatly reduced by increasing the doping concentration of current spreading layer and will not cause a huge electric field in gate oxide layer. The specific on-resistance is decreased by about 27.8% and the static characteristic (BV<sup>2</sup>/<inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ on,sp}}$ </tex-math></inline-formula>) of the device is improved about 37.3%. SiC material has a high third quadrant turn-on voltage due to its wide band gap characteristics. The use of heterojunction integration can take place of parasitic body diode and reduce its turn-on voltage, avoid the bipolar degradation effect, and improves the reverse recovery characteristics. To evaluate the dynamic performance, the reverse transmission capacitance (<inline-formula> <tex-math notation="LaTeX">$\text{C}_{\mathrm{ rss}}$ </tex-math></inline-formula>) and gate-drain charge (<inline-formula> <tex-math notation="LaTeX">$\text{Q}_{\mathrm{ gd}}$ </tex-math></inline-formula>) of the proposed structure have been studied in this paper via numerical simulations. Based on the simulation, the HF-FOM (<inline-formula> <tex-math notation="LaTeX">$\text{C}_{\mathrm{ rss}} {\times }\text{R}_{\mathrm{ on,sp}}$ </tex-math></inline-formula>) and HF-FOM<sup>2</sup> (<inline-formula> <tex-math notation="LaTeX">$\text{Q}_{\mathrm{ gd}} {\times }\text{R}_{\mathrm{ on,sp}}$ </tex-math></inline-formula>) of the proposed structure are decreased by about 87% and 86%, respectively. Meanwhile, the reverse turn-on voltage and reverse recovery characteristics are also improved, and the total energy loss decreases by about 37.3%. |
| first_indexed | 2024-04-14T04:00:49Z |
| format | Article |
| id | doaj.art-d72b3656954e484ab81b6d0184ce8edd |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-04-14T04:00:49Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-d72b3656954e484ab81b6d0184ce8edd2022-12-22T02:13:32ZengIEEEIEEE Journal of the Electron Devices Society2168-67342022-01-011055456110.1109/JEDS.2022.31924209832970Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction DiodeHai-Yong Xu0Ying Wang1https://orcid.org/0000-0002-1123-369XMeng-Tian Bao2https://orcid.org/0000-0002-9866-0546Fei Cao3School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, ChinaSchool of Electronics and Information, Hangzhou Dianzi University, Hangzhou, ChinaSchool of Electronics and Information, Hangzhou Dianzi University, Hangzhou, ChinaSchool of Electronics and Information, Hangzhou Dianzi University, Hangzhou, ChinaA 4H-SiC MOSFET with p-type region injection and integrated split gate and heterojunction diode is proposed in this paper. Compared with the conventional MOSFET, the proposed structure has a lower on-resistance and switching loss. And the gate oxide layer has been well protected by the p-type region, which reduces the electric field in gate oxide layer at the off-state. The on-resistance of device can be greatly reduced by increasing the doping concentration of current spreading layer and will not cause a huge electric field in gate oxide layer. The specific on-resistance is decreased by about 27.8% and the static characteristic (BV<sup>2</sup>/<inline-formula> <tex-math notation="LaTeX">$\text{R}_{\mathrm{ on,sp}}$ </tex-math></inline-formula>) of the device is improved about 37.3%. SiC material has a high third quadrant turn-on voltage due to its wide band gap characteristics. The use of heterojunction integration can take place of parasitic body diode and reduce its turn-on voltage, avoid the bipolar degradation effect, and improves the reverse recovery characteristics. To evaluate the dynamic performance, the reverse transmission capacitance (<inline-formula> <tex-math notation="LaTeX">$\text{C}_{\mathrm{ rss}}$ </tex-math></inline-formula>) and gate-drain charge (<inline-formula> <tex-math notation="LaTeX">$\text{Q}_{\mathrm{ gd}}$ </tex-math></inline-formula>) of the proposed structure have been studied in this paper via numerical simulations. Based on the simulation, the HF-FOM (<inline-formula> <tex-math notation="LaTeX">$\text{C}_{\mathrm{ rss}} {\times }\text{R}_{\mathrm{ on,sp}}$ </tex-math></inline-formula>) and HF-FOM<sup>2</sup> (<inline-formula> <tex-math notation="LaTeX">$\text{Q}_{\mathrm{ gd}} {\times }\text{R}_{\mathrm{ on,sp}}$ </tex-math></inline-formula>) of the proposed structure are decreased by about 87% and 86%, respectively. Meanwhile, the reverse turn-on voltage and reverse recovery characteristics are also improved, and the total energy loss decreases by about 37.3%.https://ieeexplore.ieee.org/document/9832970/Silicon carbidespecific on-resistanceswitching energy lossfigure of meritheterojunction diode |
| spellingShingle | Hai-Yong Xu Ying Wang Meng-Tian Bao Fei Cao Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode IEEE Journal of the Electron Devices Society Silicon carbide specific on-resistance switching energy loss figure of merit heterojunction diode |
| title | Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode |
| title_full | Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode |
| title_fullStr | Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode |
| title_full_unstemmed | Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode |
| title_short | Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode |
| title_sort | low switching loss split gate 4h sic mosfet with integrated heterojunction diode |
| topic | Silicon carbide specific on-resistance switching energy loss figure of merit heterojunction diode |
| url | https://ieeexplore.ieee.org/document/9832970/ |
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