| Summary: | Technological products in the fields of optoelectronic, energy conversion, nano-medical applications and catalysis etc. need to produce nano-sized materials production due to the technologies miniaturization together with developing technologies. For this purpose, scientific studies are focus on the atomic scale thin film coating technologies. At this point, atomic layer deposition (ALD) thin film growth technology comes into play with its capability of greater film quality at the atomic scale. In the present study, fundamental knowledge were explained, and ZnO, TiO2 and Al2O3 thin films were grown by atomic layer deposition (ALD) technique on silicon substrates at 200 ºC. Firstly, thin film production processes were repeated different times for the production of homogeneous film structure changing different experimental parameters and most effective conditions were determined. After the determination of the process parameters, characterization of the ZnO, TiO2 and Al2O3 thin films were made for most homogeneous films. The thicknesses of the films were measured with a spectroscopic ellipsometer to determine
whether they were homogeneous or not. XRD pattern of thin film was investigated to determine crystal structures and homogeneities of the films.
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