Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3
Atomic scale details of the formation of point defects and their evolution to phase transformation in silicon (Si) implanted β-Ga2O3 were studied using high resolution scanning transmission electron microscopy (STEM). The effect of Si implantation and the formation of defects was studied as a functi...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2023-06-01
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Series: | APL Materials |
Online Access: | http://dx.doi.org/10.1063/5.0134467 |