Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3

Atomic scale defect formation and phase transformation in Si implanted β-Ga2O3

Atomic scale details of the formation of point defects and their evolution to phase transformation in silicon (Si) implanted β-Ga2O3 were studied using high resolution scanning transmission electron microscopy (STEM). The effect of Si implantation and the formation of defects was studied as a functi...

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Bibliographic Details
Main Authors:	Hsien-Lien Huang, Christopher Chae, Jared M. Johnson, Alexander Senckowski, Shivam Sharma, Uttam Singisetti, Man Hoi Wong, Jinwoo Hwang
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2023-06-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/5.0134467

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