Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation

Slicing of 4H‐SiC Wafers Combining Ultrafast Laser Irradiation and Bandgap‐Selective Photo‐Electrochemical Exfoliation

Abstract High‐efficiency and low‐loss processing is the mainstay to reduce the cost and deepen the application of 4H silicon carbide (4H‐SiC) wafers in high‐power and high‐frequency electronics. In this study, the high‐yield slicing of 4H‐SiC wafers is realized by combining femtosecond laser irradia...

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Bibliographic Details
Main Authors: Wenhao Geng, Qinqin Shao, Yan Pei, Lingbo Xu, Can Cui, Xiaodong Pi, Deren Yang, Rong Wang
Format: Article
Language:English
Published: Wiley-VCH 2023-07-01
Series:Advanced Materials Interfaces
Subjects:
4H silicon carbide wafers
ultrafast laser slicing
photo‐electrochemical etching
Online Access:https://doi.org/10.1002/admi.202300200

Internet

https://doi.org/10.1002/admi.202300200

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