Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride

Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride

Resistive random-access memory (RRAM) devices are fabricated by utilizing silicon oxynitride (SiO<sub>x</sub>N<sub>y</sub>) thin film as a resistive switching layer. A SiO<sub>x</sub>N<sub>y</sub> layer is deposited on a p+-Si substrate and capped with...

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Bibliographic Details
Main Authors: Nayan C. Das, Se-I Oh, Jarnardhanan R. Rani, Sung-Min Hong, Jae-Hyung Jang
Format: Article
Language:English
Published: MDPI AG 2020-05-01
Series:Applied Sciences
Subjects:
bipolar
electroforming free
filamentary mode
multilevel
resistive switching
Online Access:https://www.mdpi.com/2076-3417/10/10/3506

Internet

https://www.mdpi.com/2076-3417/10/10/3506

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