Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride
Resistive random-access memory (RRAM) devices are fabricated by utilizing silicon oxynitride (SiO<sub>x</sub>N<sub>y</sub>) thin film as a resistive switching layer. A SiO<sub>x</sub>N<sub>y</sub> layer is deposited on a p+-Si substrate and capped with...
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MDPI AG
2020-05-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/10/10/3506 |
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| author | Nayan C. Das Se-I Oh Jarnardhanan R. Rani Sung-Min Hong Jae-Hyung Jang |
| author_facet | Nayan C. Das Se-I Oh Jarnardhanan R. Rani Sung-Min Hong Jae-Hyung Jang |
| author_sort | Nayan C. Das |
| collection | DOAJ |
| description | Resistive random-access memory (RRAM) devices are fabricated by utilizing silicon oxynitride (SiO<sub>x</sub>N<sub>y</sub>) thin film as a resistive switching layer. A SiO<sub>x</sub>N<sub>y</sub> layer is deposited on a p+-Si substrate and capped with a top electrode consisting of Au/Ni. The SiO<sub>x</sub>N<sub>y</sub>-based memory device demonstrates bipolar multilevel operation. It can switch interchangeably between all resistance states, including direct SET switching from a high-resistance state (HRS) to an intermediate-resistance state (IRS) or low-resistance state (LRS), direct RESET switching process from LRS to IRS or HRS, and SET/RESET switching from IRS to LRS or HRS by controlling the magnitude of the applied write voltage signal. The device also shows electroforming-free ternary nonvolatile resistive switching characteristics having R<sub>HRS</sub>/R<sub>IRS</sub> > 10, R<sub>IRS</sub>/R<sub>LRS</sub> > 5, R<sub>HRS</sub>/R<sub>LRS</sub> > 10<sup>3</sup>, and retention over 1.8 × 10<sup>4</sup> s. The resistive switching mechanism in the devices is found to be combinatory processes of hopping conduction by charge trapping/detrapping in the bulk SiO<sub>x</sub>N<sub>y</sub> layer and filamentary switching mode at the interface between the SiO<sub>x</sub>N<sub>y</sub> and Ni layers. |
| first_indexed | 2024-03-10T19:44:11Z |
| format | Article |
| id | doaj.art-d788086849b24be0aef9835fb6957daa |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-10T19:44:11Z |
| publishDate | 2020-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-d788086849b24be0aef9835fb6957daa2023-11-20T00:58:12ZengMDPI AGApplied Sciences2076-34172020-05-011010350610.3390/app10103506Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon OxynitrideNayan C. Das0Se-I Oh1Jarnardhanan R. Rani2Sung-Min Hong3Jae-Hyung Jang4Gwangju Institute of Science and Technology, School of Electrical Engineering and Computer Science, Gwangju 61005, KoreaR&D Division, Future Technology Research Center, SK Hynix Inc., Incheon 467010, KoreaGwangju Institute of Science and Technology, School of Electrical Engineering and Computer Science, Gwangju 61005, KoreaGwangju Institute of Science and Technology, School of Electrical Engineering and Computer Science, Gwangju 61005, KoreaGwangju Institute of Science and Technology, School of Electrical Engineering and Computer Science, Gwangju 61005, KoreaResistive random-access memory (RRAM) devices are fabricated by utilizing silicon oxynitride (SiO<sub>x</sub>N<sub>y</sub>) thin film as a resistive switching layer. A SiO<sub>x</sub>N<sub>y</sub> layer is deposited on a p+-Si substrate and capped with a top electrode consisting of Au/Ni. The SiO<sub>x</sub>N<sub>y</sub>-based memory device demonstrates bipolar multilevel operation. It can switch interchangeably between all resistance states, including direct SET switching from a high-resistance state (HRS) to an intermediate-resistance state (IRS) or low-resistance state (LRS), direct RESET switching process from LRS to IRS or HRS, and SET/RESET switching from IRS to LRS or HRS by controlling the magnitude of the applied write voltage signal. The device also shows electroforming-free ternary nonvolatile resistive switching characteristics having R<sub>HRS</sub>/R<sub>IRS</sub> > 10, R<sub>IRS</sub>/R<sub>LRS</sub> > 5, R<sub>HRS</sub>/R<sub>LRS</sub> > 10<sup>3</sup>, and retention over 1.8 × 10<sup>4</sup> s. The resistive switching mechanism in the devices is found to be combinatory processes of hopping conduction by charge trapping/detrapping in the bulk SiO<sub>x</sub>N<sub>y</sub> layer and filamentary switching mode at the interface between the SiO<sub>x</sub>N<sub>y</sub> and Ni layers.https://www.mdpi.com/2076-3417/10/10/3506bipolarelectroforming freefilamentary modemultilevelresistive switching |
| spellingShingle | Nayan C. Das Se-I Oh Jarnardhanan R. Rani Sung-Min Hong Jae-Hyung Jang Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride Applied Sciences bipolar electroforming free filamentary mode multilevel resistive switching |
| title | Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride |
| title_full | Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride |
| title_fullStr | Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride |
| title_full_unstemmed | Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride |
| title_short | Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride |
| title_sort | multilevel bipolar electroforming free resistive switching memory based on silicon oxynitride |
| topic | bipolar electroforming free filamentary mode multilevel resistive switching |
| url | https://www.mdpi.com/2076-3417/10/10/3506 |
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